IRLML2402GTRPBF
MOSFET N-CH 20V 1.2A SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLML2402GTRPBF, offers a 20V drain-source breakdown voltage and a continuous drain current of 1.2A at 25°C (Ta). This device features a low on-resistance of 250mOhm maximum at 930mA, 4.5V Vgs, and a gate charge of 3.9 nC maximum at 4.5V Vgs. The input capacitance (Ciss) is 110pF maximum at 15V Vds. Designed for surface mounting, it is supplied in a Micro3™/SOT-23 package. The power dissipation is rated at 540mW (Ta) with an operating temperature range of -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: 98 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 930mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro3™/SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 15 V |
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