IRLL2705TR
MOSFET N-CH 55V 3.8A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel MOSFET, part number IRLL2705TR, is a surface mount device designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain current (Id) of 3.8A at 25°C (Ta). The Rds On is specified at a maximum of 40 milliohms at 3.8A and 10V Vgs. Key electrical characteristics include a Gate Charge (Qg) of 48 nC maximum at 10V and an Input Capacitance (Ciss) of 870 pF maximum at 25V. The device is packaged in a TO-261-4, TO-261AA (SOT-223) footprint and supplied in cut tape. This MOSFET is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3.8A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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