IRLL2705PBF
MOSFET N-CH 55V 3.8A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLL2705PBF is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 55V. This component features a continuous Drain Current (Id) of 3.8A at 25°C (Ta) and a maximum power dissipation of 1W (Ta). The Rds On is specified at a maximum of 40mOhm at 3.8A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 48 nC (Max) at 10V and an Input Capacitance (Ciss) of 870 pF (Max) at 25V. The device is available in a SOT-223 package, also known as TO-261-4 or TO-261AA, for surface mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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