IRLL2703PBF
MOSFET N-CH 30V 3.9A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLL2703PBF is an N-Channel Power MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.9A at 25°C ambient. The low on-resistance (Rds On) of 45mOhm is achieved at 3.9A drain current and 10V gate-source voltage. With a gate charge (Qg) of 14 nC at 5V, it offers favorable switching characteristics. The IRLL2703PBF is housed in a SOT-223 package (TO-261-4, TO-261AA) for surface mounting, with a maximum power dissipation of 1W (Ta). Its operating temperature range is -55°C to 150°C. This component is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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