IRLL2703
MOSFET N-CH 30V 3.9A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLL2703, is designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 3.9A at 25°C. The IRLL2703 boasts a low on-resistance (Rds On) of 45mOhm at 3.9A and 10V Vgs, with a maximum power dissipation of 1W (Ta). It operates across a wide temperature range of -55°C to 150°C and is available in a surface mount SOT-223 package (TO-261-4, TO-261AA). Key parameters include a Gate Charge (Qg) of 14 nC at 5V and an Input Capacitance (Ciss) of 530 pF at 25V. This component is suitable for use in various industrial and consumer electronics sectors requiring robust power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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