IRLL1503
MOSFET N-CH 30V 75A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLL1503 is an N-Channel Power MOSFET designed for high-current applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C (Ta). With a low on-resistance (Rds On) of 3.3mOhm at 140A and 10V Vgs, it offers excellent conduction efficiency. The IRLL1503 has a gate charge (Qg) of 200 nC maximum at 10V and input capacitance (Ciss) of 5730 pF maximum at 25V. The threshold voltage (Vgs(th)) is 4V maximum at 250µA. Packaged in a SOT-223 (TO-261-4, TO-261AA) through-hole configuration, this MOSFET is suitable for use in automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Grade | - |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5730 pF @ 25 V |
| Qualification | - |
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