IRLL024Z
MOSFET N-CH 55V 5A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLL024Z is a 55V N-channel MOSFET designed for surface mount applications within the SOT-223 package. This component offers a continuous drain current of 5A at 25°C (Tc) and a maximum power dissipation of 1W (Ta). Key electrical parameters include a low Rds(on) of 60mOhm at 3A and 10V, and a gate charge (Qg) of 11 nC at 5V. Input capacitance (Ciss) is rated at 380 pF maximum at 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±16V. This MOSFET finds application in various industries, including automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
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