IRLL014NPBF
MOSFET N-CH 55V 2A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLL014NPBF. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 2A at 25°C. The Rds On is specified at a maximum of 140mOhm at 2A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 14 nC and Input Capacitance (Ciss) of 230 pF at 25V. The MOSFET is housed in a SOT-223 package for surface mounting, with a maximum power dissipation of 1W. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
