IRLIZ44NPBF
MOSFET N-CH 55V 30A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLIZ44NPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 30A at 25°C, with a maximum power dissipation of 45W at the same temperature. The Rds(On) is specified at 22mOhm maximum at 17A and 10V gate drive. Key parameters include a gate charge (Qg) of 48 nC maximum at 5V and input capacitance (Ciss) of 1700 pF maximum at 25V. It operates over a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220AB Full-Pak package for through-hole mounting. This device is suitable for use in automotive, industrial, and power supply applications demanding robust power handling capabilities.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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