IRLIZ24NPBF
MOSFET N-CH 55V 14A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLIZ24NPBF. This component features a 55V drain-source voltage and a continuous drain current of 14A at 25°C. The on-resistance (Rds On) is a maximum of 60mOhm at 8.4A and 10V Vgs. The device is packaged in a TO-220AB Full-Pak for through-hole mounting and offers a power dissipation of 26W at 25°C. Key parameters include a gate charge of 15nC at 5V Vgs and input capacitance of 480pF at 25V Vds. Operating temperature ranges from -55°C to 175°C. This MOSFET is suitable for applications in automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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