IRLIB9343
MOSFET P-CH 55V 14A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRLIB9343, is a through-hole device in a TO-220AB Full-Pak package. This MOSFET features a drain-to-source voltage (Vds) of 55V and a continuous drain current (Id) of 14A at 25°C (Tc). The typical Rds On is 105mOhm at 3.4A and 10V, with drive voltages ranging from 4.5V to 10V. Key parameters include a maximum power dissipation of 33W (Tc) and a gate charge (Qg) of 47 nC at 10V. Input capacitance (Ciss) is 660 pF at 50V. This component is suitable for applications in automotive and industrial sectors. It operates within a temperature range of -40°C to 175°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 50 V |
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