IRLIB4343
MOSFET N-CH 55V 19A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRLIB4343. This component features a 55V drain-to-source voltage and a continuous drain current of 19A at 25°C (Tc). The Rds(on) is rated at a maximum of 50mOhm at 4.7A and 10V gate-source voltage. With a gate charge of 42nC (max) at 10V, this MOSFET is suitable for applications requiring efficient power switching. The TO-220AB Full-Pak package is designed for through-hole mounting. Operating temperature ranges from -40°C to 175°C (TJ). This device finds application in automotive, industrial, and consumer electronics sectors where robust power management is critical.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 50 V |
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