IRLI540N
MOSFET N-CH 100V 23A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLI540N is a N-Channel power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 23A at 25°C (Tc). The low on-resistance is specified as 44mOhm maximum at 12A and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 2V maximum at 250µA. Key parameters include a maximum gate charge (Qg) of 74 nC at 5V and input capacitance (Ciss) of 1800 pF at 25V. The device offers a maximum power dissipation of 54W (Tc) and operates within a temperature range of -55°C to 175°C. Packaged in a PG-TO220-FP package for through-hole mounting, this MOSFET is suitable for use in industrial and automotive power switching applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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