IRLI530NPBF
MOSFET N-CH 100V 12A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLI530NPBF, offers a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 12A (Tc) at 25°C. This device features a low on-resistance (Rds On) of 100mOhm maximum at 9A and 10V, with a gate threshold voltage (Vgs(th)) of 2V maximum at 250µA. The input capacitance (Ciss) is 800 pF maximum at 25 V, and the gate charge (Qg) is 34 nC maximum at 5 V. With a maximum power dissipation of 41W (Tc), this through-hole component is housed in a TO-220AB Full-Pak package, suitable for demanding applications across industrial and automotive sectors. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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