IRLI530N
MOSFET N-CH 100V 12A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLI530N, is designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and offers a continuous Drain Current (Id) of 12A at 25°C (Tc), with a maximum power dissipation of 41W (Tc). The on-resistance (Rds On) is specified at a maximum of 100mOhm when driven at 9A and 10V. Key parameters include a Gate Charge (Qg) of 34 nC at 5V and an Input Capacitance (Ciss) of 800 pF at 25V. The MOSFET technology utilizes Metal Oxide, with a threshold voltage (Vgs(th)) of 2V at 250µA and a maximum gate-source voltage (Vgs) of ±16V. This component is housed in a PG-TO220-FP package suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). It finds utility in various industrial sectors requiring robust power switching solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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