IRLI520N
MOSFET N-CH 100V 8.1A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRLI520N is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 8.1A at 25°C (Tc), this component offers robust power handling capabilities with a maximum power dissipation of 30W (Tc). The IRLI520N exhibits a low on-resistance (Rds On) of 180mOhm maximum at 6A and 10V, facilitated by its advanced MOSFET technology. Gate drive requirements range from 4V to 10V, with a typical gate charge (Qg) of 20 nC at 5V and input capacitance (Ciss) of 440 pF at 25V. The device is packaged in a PG-TO220-FP configuration for through-hole mounting, ensuring efficient thermal management across an operating temperature range of -55°C to 175°C (TJ). This component is frequently utilized in power supply units, motor control systems, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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