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IRLI3803PBF

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IRLI3803PBF

MOSFET N-CH 30V 76A TO220AB FP

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies IRLI3803PBF is an N-Channel Power MOSFET from the HEXFET® series. This through-hole component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 76A at 25°C. With a maximum power dissipation of 63W (Tc), it offers a low Rds On of 6mOhm at 40A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 140 nC at 4.5V and input capacitance (Ciss) of 5000 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220AB Full-Pak package. This component is suitable for applications in automotive and industrial power switching.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)63W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageTO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 25 V

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