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IRLI3803

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IRLI3803

MOSFET N-CH 30V 76A TO220AB FP

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRLI3803 is a 30V N-Channel Power MOSFET designed for high-current applications. This device features a low Rds(on) of 6mOhm at 40A and 10V Vgs, facilitating efficient power delivery. With a continuous drain current capability of 76A (Tc) and a maximum power dissipation of 63W (Tc), it is suitable for demanding thermal environments. The IRLI3803 utilizes MOSFET technology and is packaged in a PG-TO220-FP for through-hole mounting. Key electrical parameters include a gate charge of 140 nC at 4.5V and an input capacitance of 5000 pF at 25V. This component is utilized in industries such as automotive, industrial power control, and battery management systems. It operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±16V.

Additional Information

Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)63W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackagePG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 25 V

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