IRLI2910PBF
MOSFET N-CH 100V 31A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-channel power MOSFET, part number IRLI2910PBF. This through-hole device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 31A at 25°C (Tc). The On-Resistance (Rds On) is a maximum of 26mOhm at 16A and 10V Vgs. Key parameters include Gate Charge (Qg) of 140 nC (max) at 5V Vgs and Input Capacitance (Ciss) of 3700 pF (max) at 25V Vds. The MOSFET is rated for a maximum power dissipation of 63W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). The component is housed in a TO-220AB Full-Pak package. This MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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