IRLI2910
MOSFET N-CH 100V 31A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLI2910, is a through-hole component with a TO-220AB Full-Pak package. This device offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 31A at 25°C (Tc). The Rds(on) is specified at a maximum of 26mOhm at 16A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 140nC at 5V and input capacitance (Ciss) of 3700pF at 25V. With a maximum power dissipation of 63W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in industrial and automotive sectors. The drive voltage range is 4V to 10V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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