IRLI2505
MOSFET N-CH 55V 58A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLI2505, is designed for high-current switching applications. This device features a 55V drain-source voltage rating and a continuous drain current capability of 58A at 25°C (Tc). The low on-resistance of 8mOhm at 31A and 10V gate drive voltage minimizes conduction losses. With a gate charge (Qg) of 130 nC (max) at 5V and an input capacitance (Ciss) of 5000 pF (max) at 25V, it offers efficient switching characteristics. The device is packaged in a TO-220-3 Full Pack through-hole mounting style, providing robust thermal performance with a maximum power dissipation of 63W (Tc) and an operating temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in industries such as automotive, industrial power control, and consumer electronics requiring reliable power switching solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
