IRLI2203NPBF
MOSFET N-CH 30V 61A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLI2203NPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a 30V drain-source breakdown voltage and a continuous drain current rating of 61A at 25°C (Tc), with a maximum power dissipation of 47W (Tc). Its low on-resistance, specified at 7mOhm maximum at 37A and 10V Vgs, is achieved with gate drive voltages ranging from 4.5V to 10V. The device exhibits a typical gate charge of 110 nC at 4.5V and an input capacitance (Ciss) of 3500 pF at 25V. Packaged in a TO-220AB Full-Pak for through-hole mounting, it operates across a temperature range of -55°C to 175°C (TJ). The IRLI2203NPBF is suitable for applications in automotive, industrial power control, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB Full-Pak |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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