IRLI2203N
MOSFET N-CH 30V 61A TO220AB FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLI2203N is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 61A at 25°C (Tc). With a low on-resistance (Rds On) of 7mOhm at 37A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 47W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 110 nC at 4.5V and input capacitance (Ciss) of 3500 pF at 25V/25V. The IRLI2203N is housed in a PG-TO220-FP package, suitable for through-hole mounting. This MOSFET is commonly utilized in power switching, motor control, and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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