IRLHS6342TRPBF
MOSFET N-CH 30V 8.7A/19A 6PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRLHS6342TRPBF, is a 30V device featuring low Rds(on) of 15.5mOhm at 8.5A and 4.5V Vgs. This surface mount component is housed in a 6-PQFN (2x2) package, supplied in Digi-Reel®. With continuous drain current ratings of 8.7A (Ta) and 19A (Tc), and a maximum power dissipation of 2.1W (Ta), it is suitable for demanding applications. Key parameters include a gate charge of 11nC @ 4.5V and input capacitance of 1019pF @ 25V. The operating temperature range is -55°C to 150°C. This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 8.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | 6-PQFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1019 pF @ 25 V |
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