IRLHS6342TR2PBF
MOSFET N-CH 30V 8.7A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IRLHS6342TR2PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 30V and supports a continuous drain current of 8.7A at 25°C ambient temperature, increasing to 19A under specified case temperature conditions. With a low on-resistance of 15.5mOhm at 8.5A and 4.5V Vgs, it minimizes conduction losses. The MOSFET exhibits a typical Gate Charge (Qg) of 11 nC at 4.5V and an Input Capacitance (Ciss) of 1019 pF at 25V. Its advanced technology and compact 6-PQFN (2x2) package, supplied in cut tape, make it suitable for surface mount integration in power management, automotive, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 8.5A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | 6-PQFN (2x2) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1019 pF @ 25 V |
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