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IRLHS6242TR2PBF

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IRLHS6242TR2PBF

MOSFET N-CH 20V 10A PQFN

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies IRLHS6242TR2PBF is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 20V Drain-Source Voltage (Vdss) and can handle a continuous drain current of 10A at 25°C ambient temperature, increasing to 12A under case temperature conditions. The low on-resistance of 11.7mOhm at 8.5A and 4.5V gate-source voltage, coupled with a gate charge of 14nC (max) at 4.5V, ensures efficient power switching. The input capacitance (Ciss) is 1110pF (max) at 10V. This MOSFET utilizes advanced Metal Oxide technology and is housed in a compact 6-PQFN (2x2) surface-mount package, supplied in cut tape. It is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / Case6-PowerVDFN
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs11.7mOhm @ 8.5A, 4.5V
FET Feature-
Vgs(th) (Max) @ Id1.1V @ 10µA
Supplier Device Package6-PQFN (2x2)
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1110 pF @ 10 V

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