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IRLHS2242TR2PBF

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IRLHS2242TR2PBF

MOSFET P-CH 20V 5.8A 2X2 PQFN

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies P-Channel MOSFET, part number IRLHS2242TR2PBF, offers a 20V drain-source breakdown voltage and a continuous drain current of 7.2A at 25°C ambient and 15A at 25°C case temperature. This device features a low on-resistance of 31mOhm maximum at 8.5A and 4.5V Vgs. The gate charge is specified at 12nC maximum at 10V, with input capacitance (Ciss) at 877pF maximum at 10V Vds. The IRLHS2242TR2PBF is housed in a compact 6-PQFN (2x2) surface mount package, supplied on cut tape. This component is suitable for applications in consumer electronics and industrial control systems. The threshold voltage (Vgs(th)) is a maximum of 1.1V at 10µA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / Case6-PowerVDFN
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs31mOhm @ 8.5A, 4.5V
FET Feature-
Vgs(th) (Max) @ Id1.1V @ 10µA
Supplier Device Package6-PQFN (2x2)
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds877 pF @ 10 V

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