IRLHM630TRPBF
MOSFET N-CH 30V 21A/40A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRLHM630TRPBF, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 21A at ambient temperature and 40A at case temperature. This device features a low on-resistance of 3.5mOhm maximum at 20A and 4.5V Vgs. The IRLHM630TRPBF is packaged in a compact 3x3mm PQFN (8-VQFN Exposed Pad) for surface mounting and is supplied on tape and reel. Key parameters include a gate charge of 62nC maximum at 4.5V Vgs and input capacitance of 3170pF maximum at 25V Vds. Power dissipation is rated at 2.7W (Ta) and 37W (Tc). This component is suitable for applications in the automotive and industrial sectors requiring efficient power switching. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Supplier Device Package | PQFN (3x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V |
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