IRLHM630TR2PBF
MOSFET N-CH 30V 21A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLHM630TR2PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 21A at 25°C ambient, scaling to 40A at 25°C case temperature. With a low on-resistance of 3.5mOhm at 20A and 4.5V Vgs, it minimizes conduction losses. The PQFN (3x3) surface mount package, specifically the 8-VQFN Exposed Pad, offers excellent thermal performance and a compact footprint suitable for power management in automotive and industrial systems. Key parameters include a maximum gate charge (Qg) of 62 nC at 4.5V and input capacitance (Ciss) of 3170 pF at 25V. The threshold voltage (Vgs(th)) is 1.1V at 50µA. This component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Supplier Device Package | PQFN (3x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V |
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