IRLHM620TR2PBF
MOSFET N-CH 20V 26A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLHM620TR2PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current capability of 26A at 25°C ambient temperature, scaling to 40A under case temperature conditions. The low on-resistance of 2.5mOhm at 20A and 4.5V Vgs, coupled with a gate charge of 78 nC (max) at 4.5V, facilitates efficient power conversion. Packaged in a compact 3x3 PQFN (8-VQFN Exposed Pad) for surface mounting, this MOSFET is suitable for use in automotive and industrial power management systems. Key electrical characteristics include an input capacitance (Ciss) of 3620 pF (max) at 10V Vds and a threshold voltage (Vgs(th)) of 1.1V at 50µA. The device is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-VQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Supplier Device Package | PQFN (3x3) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3620 pF @ 10 V |
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