IRLH7134TR2PBF
MOSFET N-CH 40V 26A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLH7134TR2PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 26A at 25°C ambient and 85A at 25°C case temperature. The low on-resistance of 3.3mOhm at 50A and 10V gate-source voltage, coupled with a typical gate charge of 58 nC at 4.5V, ensures efficient switching performance. It offers a maximum input capacitance (Ciss) of 3720 pF at 25V and a gate threshold voltage (Vgs(th)) of 2.5V at 100µA. Packaged in an 8-PQFN (5x6) footprint for surface mounting, this MOSFET is suitable for high-power switching, automotive, and industrial power supply designs. The component is supplied in Cut Tape (CT).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 25 V |
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