IRLH6224TR2PBF
MOSFET N CH 20V 28A PQFN 5X6 MMManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLH6224TR2PBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 28A at 25°C ambient and 105A at 25°C case temperature. With a low on-resistance of 3mOhm at 20A and 4.5V, it minimizes conduction losses. The device exhibits a typical gate charge of 86 nC at 10V and an input capacitance (Ciss) of 3710 pF at 10V. It is housed in an 8-PQFN (5x6) surface mount package, supplied on cut tape. The threshold voltage (Vgs(th)) is a maximum of 1.1V at 50µA. This MOSFET is commonly utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3710 pF @ 10 V |
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