IRLH5036TRPBF
MOSFET N-CH 60V 20A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLH5036TRPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage and offers a continuous drain current of 20A at 25°C ambient and 100A at 25°C case temperature. With a low Rds(on) of 4.4mOhm at 50A and 10V gate drive, power loss is minimized. The 8-PQFN (5x6) package enables efficient thermal management, supporting a continuous power dissipation of 3.6W (Ta) and 160W (Tc). Key parameters include a gate charge (Qg) of 90 nC at 10V and input capacitance (Ciss) of 5360 pF at 25V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for automotive, industrial power control, and high-reliability computing systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 160W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5360 pF @ 25 V |