IRLH5036TR2PBF
MOSFET N-CH 60V 100A 5X6 PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLH5036TR2PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a 60V drain-to-source voltage and a continuous drain current capability of 100A at the case temperature (Tc) and 20A at the ambient temperature (Ta). The MOSFET exhibits a low on-resistance of 4.4mOhm at 50A and 10V, with a gate charge of 90nC at 10V. Input capacitance (Ciss) is rated at a maximum of 5360pF at 25V. The device utilizes MOSFET technology and is housed in an 8-PQFN (5x6) surface mount package, supplied on cut tape. This component is suitable for demanding applications across industries such as automotive, industrial power, and telecommunications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5360 pF @ 25 V |
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