IRLH5034TRPBF
MOSFET N-CH 40V 29A/100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRLH5034TRPBF, a HEXFET® N-Channel Power MOSFET. This device features a 40V drain-source breakdown voltage and offers a continuous drain current of 29A at ambient temperature and 100A at case temperature. With a low on-resistance of 2.4mOhm at 50A and 10V Vgs, it achieves a maximum power dissipation of 3.6W (Ta) and 156W (Tc). The IRLH5034TRPBF is housed in an 8-PQFN (5x6) package for surface mounting, and operates across a temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 82nC (max) at 10V Vgs and input capacitance of 4730pF (max) at 25V Vds. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4730 pF @ 25 V |
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