IRLH5030TR2PBF
MOSFET N-CH 100V 13A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLH5030TR2PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 13 A at 25°C ambient, scaling to 100 A at 25°C case temperature. The low on-resistance (Rds On) of 9 mOhm at 50 A and 10 V gate-source voltage ensures efficient power transfer. Key parameters include a Gate Charge (Qg) of 94 nC maximum and Input Capacitance (Ciss) of 5185 pF maximum. Mounted in an 8-PowerVDFN (PQFN 5x6) package, this RoHS compliant device is suitable for surface mounting. Applications span automotive, industrial power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 150µA |
| Supplier Device Package | PQFN (5x6) Single Die |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5185 pF @ 50 V |
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