IRLC120NB
MOSFET 100V 10A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLC120NB is a 100V N-channel power MOSFET available as a die. This component offers a continuous drain current of 10A at 25°C and features a low on-resistance of 180mOhm maximum at 10A and 10V Vgs. Designed for surface mount applications, the IRLC120NB is suitable for high-density power solutions. Its robust construction and performance characteristics make it a reliable choice for various industrial and automotive applications requiring efficient power switching. The die format allows for flexible integration into custom power modules and advanced semiconductor assemblies.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
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