IRLC024NB
MOSFET 55V 17A DIEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLC024NB is a N-Channel Power MOSFET designed for demanding applications. This surface mount die offers a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 17A at 25°C. With a maximum On-Resistance (Rds On) of 65mOhm at 17A and 10V Vgs, it provides efficient power switching. The advanced MOSFET technology ensures reliable performance in various industrial sectors, including automotive, computing, and power supply designs. Packaged in Bulk for high-volume integration.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 17A |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 55 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
