IRLBL1304
MOSFET N-CH 40V 185A SUPER D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLBL1304 is a 40V N-Channel Power MOSFET in a SUPER D2-PAK package. This device offers a continuous drain current capability of 185A at 25°C and a maximum power dissipation of 300W at 25°C (Tc). Key specifications include a low on-resistance (Rds(on)) of 4.5mOhm maximum at 110A and 10V gate drive, and a gate charge (Qg) of 140 nC maximum at 4.5V. It features a gate threshold voltage (Vgs(th)) of 1V maximum at 250µA and is designed for a gate-source voltage (Vgs) range of ±16V. The input capacitance (Ciss) is rated at 7660 pF maximum at 25V drain-source voltage. This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SUPER D2-PAK |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 185A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SUPER D2-PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7660 pF @ 25 V |
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