IRLBD59N04ETRLP
MOSFET N-CH 40V 59A TO263-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLBD59N04ETRLP is a 40V N-Channel Power MOSFET designed for demanding applications. This device features a continuous drain current capability of 59A (Tc) and a maximum power dissipation of 130W (Tc). The low on-resistance of 18mOhm at 35A and 10V (Vgs) ensures efficient power transfer. Key parameters include a typical gate charge (Qg) of 50 nC at 5V and input capacitance (Ciss) of 2190 pF at 25V. The MOSFET operates reliably across a wide temperature range of -55°C to 175°C (TJ). Packaged in a surface mount TO-263-5 (D2PAK) configuration, it is supplied on tape and reel. This component is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-6, D2PAK (5 Leads + Tab), TO-263BA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |