IRLBA3803P
MOSFET N-CH 30V 179A SUPER-220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLBA3803P, offers a 30V drain-source breakdown voltage and a continuous drain current of 179A at 25°C (Tc). This device features a low on-resistance of 5mOhm maximum at 71A and 10V gate-source voltage. With a gate charge of 140nC (max) at 4.5V and input capacitance of 5000pF (max) at 25V, it is suitable for high-frequency switching applications. The power dissipation is rated at 270W (Tc). Packaged in a SUPER-220™ (TO-273AA) through-hole configuration, the IRLBA3803P operates across a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-273AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 179A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 71A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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