IRLBA1304PPBF
MOSFET N-CH 40V 185A SUPER-220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLBA1304PPBF is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 185A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 4mOhm maximum at 110A and 10V Vgs, facilitating reduced conduction losses. With a maximum power dissipation of 300W (Tc), it is suitable for demanding power management tasks. The SUPER-220™ (TO-273AA) package, designed for through-hole mounting, ensures robust thermal performance. Key electrical characteristics include a gate charge (Qg) of 140 nC at 4.5V Vgs and an input capacitance (Ciss) of 7660 pF at 25V Vds. This MOSFET is utilized in automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-273AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 185A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7660 pF @ 25 V |
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