IRLBA1304P
MOSFET N-CH 40V 185A SUPER-220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLBA1304P is an N-Channel Power MOSFET designed for high-current applications. This component features a 40V drain-to-source voltage and a continuous drain current of 185A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The IRLBA1304P offers a low on-resistance of 4mOhm at 110A and 10V, driven by gate voltages from 4.5V to 10V. Key electrical characteristics include a maximum gate charge of 140 nC at 4.5V and an input capacitance of 7660 pF at 25V. It operates across a wide temperature range of -55°C to 175°C (TJ). The device is housed in a SUPER-220™ (TO-273AA) package, suitable for through-hole mounting. This MOSFET is utilized in demanding applications such as power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-273AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 185A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7660 pF @ 25 V |
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