IRLB8721PBF
MOSFET N-CH 30V 62A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IRLB8721PBF is an N-Channel Power MOSFET from the HEXFET® series. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 62 A at 25°C, with a maximum power dissipation of 65 W. The device exhibits a low on-resistance of 8.7 mOhm at 31 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 13 nC at 4.5 V and input capacitance (Ciss) of 1077 pF at 15 V. Designed for through-hole mounting, this MOSFET is packaged in a TO-220AB. Operating temperature ranges from -55°C to 175°C. This component is suitable for applications in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1077 pF @ 15 V |
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