IRLB3036GPBF
MOSFET N-CH 60V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies HEXFET® IRLB3036GPBF is a 60V N-Channel Power MOSFET designed for high-current applications. Featuring a low Rds(on) of 2.4mOhm at 165A and 10V Vgs, this component offers efficient power switching. With a continuous drain current rating of 195A (Tc) and a maximum power dissipation of 380W (Tc), it is suitable for demanding power management tasks. The device has a gate charge of 140 nC at 4.5V and an input capacitance of 11210 pF at 50V. Operating temperature range is -55°C to 175°C. The TO-220AB package with through-hole mounting is standard for robust thermal management. Applications include automotive power systems and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 165A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11210 pF @ 50 V |