IRLB3034PBFXKMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel MOSFET, part number IRLB3034PBFXKMA1, features a 40V drain-source breakdown voltage and 195A continuous drain current at 25°C case temperature. This through-hole TO-220AB packaged device offers a low on-resistance of 1.7mOhm maximum at 195A and 10V Vgs. The MOSFET exhibits a gate charge of 162 nC at 4.5V Vgs and input capacitance (Ciss) of 10315 pF at 25V Vds. With a maximum power dissipation of 375W at the case, it operates across a temperature range of -55°C to 175°C. This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10315 pF @ 25 V |
| Qualification | - |
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