IRL8113S
MOSFET N-CH 30V 105A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL8113S is a 30V N-Channel power MOSFET designed for high-current applications. This surface-mount device, housed in a D2PAK (TO-263AB) package, offers a continuous drain current of 105A (Tc) and a low on-resistance of 6mOhm at 21A, 10V. With a maximum power dissipation of 110W (Tc) and a junction temperature range of -55°C to 175°C, it ensures robust performance. Key parameters include a gate charge (Qg) of 35 nC at 4.5V and input capacitance (Ciss) of 2840 pF at 15V. This component is suitable for demanding applications in automotive, industrial power, and renewable energy sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 15 V |
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