IRL8113
MOSFET N-CH 30V 105A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL8113, offers 30V drain-source breakdown voltage and continuous drain current capability of 105A at 25°C. This through-hole TO-220AB packaged device features a low on-resistance of 6mOhm maximum at 21A and 10V Vgs. With a gate charge of 35nC maximum at 4.5V Vgs and input capacitance of 2840pF maximum at 15V Vds, it is suitable for high-current switching applications. The device operates across a wide junction temperature range of -55°C to 175°C and supports a maximum gate-source voltage of ±20V. Key applications include automotive power management, industrial motor control, and power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 15 V |
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