IRL7833STRRPBF
MOSFET N-CH 30V 150A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL7833STRRPBF, offers robust performance with a 30V drain-source voltage and continuous drain current capability of 150A at 25°C (Tc). This device features a low on-resistance of 3.8mOhm at 38A and 10V Vgs, coupled with a maximum power dissipation of 140W (Tc). The IRL7833STRRPBF utilizes advanced MOSFET technology and is housed in a TO-263-3, D2PAK surface mount package for efficient thermal management. Key electrical parameters include a gate charge of 47 nC at 4.5V and input capacitance of 4170 pF at 15V. Its operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power control, and high-power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4170 pF @ 15 V |
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