IRL7833STRLPBF
MOSFET N-CH 30V 150A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL7833STRLPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 150A at 25°C (Tc). The low on-resistance (Rds On) of 3.8mOhm at 38A and 10V gate-source voltage (Vgs) ensures efficient power delivery.
With a maximum power dissipation of 140W (Tc), this MOSFET is suitable for demanding thermal environments. It is housed in a surface-mount D2PAK (TO-263-3, D2PAK) package, compatible with tape and reel (TR) packaging for automated assembly. Key electrical parameters include a gate charge (Qg) of 47nC at 4.5V Vgs and input capacitance (Ciss) of 4170pF at 15V Vds. The operating temperature range is -55°C to 175°C (TJ). This component finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4170 pF @ 15 V |
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